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| Power Transistors 2SC4152 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching 0.70.1 Unit: mm 10.00.2 5.50.2 2.70.2 4.20.2 3.10.1 1.40.1 1.30.2 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 4.20.2 s Features q q q q q High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings 1400 1400 700 5 1.0 0.3 20 2 150 -55 to +150 Unit V V V V A A W C C 16.70.3 14.00.5 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCER VCEO VEBO ICP IC PC Tj Tstg Solder Dip s Absolute Maximum Ratings 4.0 7.50.2 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time (TC=25C) Symbol ICBO IEBO VCER VCEO VEBO hFE VCE(sat) VBE(sat) fT Cob ton tstg tf Conditions VCB = 1100V, IE = 0 VEB = 4V, IC = 0 IC = 1mA, RBE = 100 IC = 1mA, IB = 0 IE = 1mA, IC = 0 VCE = 5V, IC = 30mA IC = 60mA, IB = 6mA IC = 60mA, IB = 6mA VCE = 10V, IC = 30mA, f = 1MHz VCB = 100V, IE = 0, f = 1MHz IC = 0.15A, IB1 = 15mA, IB2 = -30mA, VCC = 250V 12 6 2 3 1 1400 700 5 10 40 2 2 V V MHz pF s s s min typ max 10 10 Unit A A V V V 1 Power Transistors PC -- Ta 40 120 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) With a 50 x 50 x 2mm Al heat sink (4) Without heat sink (PC=2W) (1) TC=25C 100 IB=5mA 4mA 3mA 2SC4152 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=10 30 10 3 1 0.3 0.1 0.03 0.01 0.001 0.003 TC=100C 25C -25C VCE(sat) -- IC Collector power dissipation PC (W) 30 Collector current IC (A) 80 2mA 60 20 40 10 (2) (3) (4) 1mA 20 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.01 0.03 0.1 0.3 1 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 hFE -- IC IC/IB=10 1000 VCE=5V 1000 fT -- IC VCE=10V f=1MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 30 300 Transition frequency fT (MHz) 0.1 0.3 1 300 10 100 TC=100C 30 25C 100 3 30 -25C 10 1 TC=-25C 100C 10 0.3 25C 3 3 0.1 0.001 0.003 0.01 0.03 0.1 0.3 1 1 0.001 0.003 0.01 0.03 1 0.001 0.003 0.01 0.03 0.1 0.3 1 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 1000 100 IE=0 f=1MHz TC=25C 30 ton, tstg, tf -- IC Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=-IB2) VCC=250V TC=25C Area of safe operation (ASO) 10 3 Non repetitive pulse TC=25C Collector output capacitance Cob (pF) Switching time ton,tstg,tf (s) 300 10 3 tstg 1 0.3 0.1 0.03 Collector current IC (A) 1 0.3 10ms 0.1 DC 0.03 0.01 0.003 0.001 t=1ms 100 ton 30 10 tf 3 1 1 3 10 30 100 0.01 0 0.2 0.4 0.6 0.8 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Area of safe operation, reverse bias ASO 1.6 1.4 Lcoil=200H IC/IB=10 (IB1=-IB2) TC=25C 2SC4152 Reverse bias ASO measuring circuit L coil IB1 T.U.T IC Collector current IC (A) 1.2 1.0 0.8 0.6 0.4 0.2 <1mA 0 0 200 400 600 800 1000 1200 1400 1600 ICP Vin -IB2 VCC IC tW Vclamp Collector to emitter voltage VCE (V) Rth(t) -- t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.2A (2W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink Thermal resistance Rth(t) (C/W) 1000 100 (1) 10 (2) 1 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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